A bilingual technical review of magnetoresistive random-access memory (MRAM), covering memory hierarchies, DRAM/SRAM/Flash/HDD, MTJ and TMR physics, STT-MRAM, SOT-MRAM, applications, engineering challenges, and future directions.
| Path | Description |
|---|---|
source/zh/ |
Chinese LaTeX source and source figures |
source/en/ |
English LaTeX source and source figures |
pdf/mram-report-zh.pdf |
Compiled Chinese report |
pdf/mram-report-en.pdf |
Compiled English report |
figures/redrawn/ |
Original redrawn MRAM diagrams |
figures/web/ |
Public-source figures used by the reports |
docs/ |
Image source notes and attribution references |
XeLaTeX is required. Compile each language twice so that the table of contents and cross-references are updated:
cd source/zh
xelatex -interaction=nonstopmode -halt-on-error main.tex
xelatex -interaction=nonstopmode -halt-on-error main.tex
cd ../en
xelatex -interaction=nonstopmode -halt-on-error main.tex
xelatex -interaction=nonstopmode -halt-on-error main.texThe English source uses the standard article class. The Chinese source uses ctexart and should be compiled with XeLaTeX.
Upload either source/zh or source/en as a project and set main.tex as the main file. The corresponding figure_from_web/ directory must remain beside main.tex.
The report figures include public-source material from Wikimedia Commons, Fraunhofer IPMS, and Nature Electronics source material. The diagrams in figures/redrawn/ are original redrawings based on public technical references. See docs/MRAM_public_image_links.md for source notes.
Sufeng Guo, School of Integrated Circuits, student ID 231880273.